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  unisonic technologies co., ltd ut9971p power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2015 unisonic technologies co., ltd qw-r502-764.c 5.0a, 60v n-channel power mosfet ? description the utc ut9971p is an n-channel enhancement mode power mosfet providing customers with high switching speed, cost-effectiveness and minimum on-state resistance. ? features * r ds(on) < 50m ? @ v gs =10v, i d =5a * high switching speed ? symbol ? ordering information pin assignment ordering number package 1 2 3 packing UT9971PG-AA3-R sot-223 g d s tape reel note: pin assignment: g: gate d: drain s: source ? marking
ut9971p power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-764.c ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 25 v continuous t a =25c i d 5 a drain current pulsed i dm 20 a power dissipation (t a =25c) p d 2.7 w junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient (note 3) ja 45 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 60 v drain-source leakage current i dss v ds =60v, v gs =0v, t j =25c 1 a forward v gs =+25v +100 na gate-source leakage current reverse i gss v gs =-25v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 1.0 3.0 v v gs =10v, i d =5a 50 m ? static drain-source on-state resistance (note 2) r ds(on) v gs =4.5v, i d =2.5a 60 m ? forward transconductance g fs v ds =10v, i d =5a 7 s dynamic parameters input capacitance c iss 760 pf output capacitance c oss 188 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 35 pf switching parameters total gate charge (note 2) q g 56 nc gate to source charge q gs 5.5 nc gate to drain charge q gd v gs =10v, v ds =48v, i d =5a 8.8 nc turn-on delay time (note 2) t d(on) 40 ns rise time t r 40 ns turn-off delay time t d(off) 170 ns fall-time t f v ds =30v, i d =1a, v gs =10v, r g =3.3 ? , r d =6 ? 50 ns source- drain diode ratings and characteristics drain-source diode forward voltage (note 2) v sd i s =5a, v gs =0v 1.2 v notes: 1. pulse width limited by max. junction temperature. 2. pulse width 300s, duty cycle 2%
ut9971p power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-764.c ? test circuits and waveforms
ut9971p power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-764.c ? typical characteristics drain current, i d (a) drain current, i d (a) drain current, i d (a) drain current, i d (a) 10 0 10 -1 10 -2 drain-source voltage, v ds (v) drain current, i d (a) 10 1 10 0 10 -1 10 2 safe operating area notes: 1. t j =25 2. t j =150 3. single pulse 10 1 10 2 10ms 100m s dc 0 5 4 3 2 1 30 20 10 40 drain-source current, i d (a) drain-source voltage, v ds (v) v gs =6v on-resistance characteristics 0 5 15 25 35 v gs =8v v gs =10v v gs =4v v gs =3v
ut9971p power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-764.c ? typical characteristics (cont.) 2 gate-source voltage, v gs (v) transfer characteristics 46 810 notes: 1. v ds =5v 2. 250s pulse test 10 1 0.1 25 150 single pulse 0.01 pulse width, t 1 (sec) 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 transient thermal response curve 10 3 0.2 0.1 duty=0.5 0.05 0.02 notes: 1. ja (t)=45d/w 2.duty = t1/t2 3.t j -t c =p d - jc (t) p d t 1 t 2 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior wr itten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


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